Wafer inspection interface and wafer inspection apparatus

ABSTRACT

A wafer inspection interface  18  includes a probe card  20  having multiple probes  25  at a surface of the probe card  20  facing a wafer W, the probes  25  being arranged to correspond to electrodes of multiple semiconductor devices formed on the wafer W; a pogo frame  40  that is in contact with a surface of the probe card  20  opposite to the surface of the probe card  20  facing the wafer W and supports the probe card  20;  and a sheath heater  44  provided in the pogo frame  40.  The sheath heater  44  is provided along respective sides of through holes  43  formed in the pogo frame  40  in a grid pattern.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Japanese Patent Application No.2012-052914 filed on Mar. 9, 2012, the entire disclosures of which areincorporated herein by reference.

FIELD OF THE INVENTION

The present disclosure relates to a wafer inspection interface includinga probe card and also relates to a wafer inspection apparatus.

BACKGROUND OF THE INVENTION

As a wafer inspection apparatus, there is known, for example, a burn-ininspection apparatus or a probe apparatus that inspects electricalcharacteristics of a multiple number of semiconductor devices formed ona wafer.

FIG. 9 is a cross sectional view illustrating a schematic configurationof a conventional probe apparatus, and FIG. 10 is a cross sectional viewillustrating a pogo frame (pogo ring) in the conventional probeapparatus of FIG. 9.

Referring to FIG. 9, a probe apparatus 100 includes a loader chamber 101serving as a wafer transfer section for transferring a wafer W; and aninspection chamber 102 for performing therein an inspection ofelectrical characteristics of a multiple number of semiconductor devicesformed on the wafer W. This probe apparatus 100 is configured to inspectthe electrical characteristics of the semiconductor devices bycontrolling various types of devices in the loader chamber 101 and theinspection chamber 102 under the control of a controller. The inspectionchamber 102 includes a mounting table 106, a pogo frame 109, a probecard 108, and an alignment device 110. The mounting table 106 mountsthereon a wafer W loaded from the loader chamber 101 and is configuredto be movable in X, Y, Z and θ directions. The pogo frame 109 isdisposed above the mounting table 106, and the probe card 108 issupported on the pogo frame 109. The alignment device 110 is configuredto perform alignment (position adjustment) between a multiple number ofprobes (inspection needles) of the probe card 108 and electrodes of thesemiconductor devices formed on the wafer W in cooperation with themounting table 106. After the wafer W and the probe card 108 are alignedwith each other by the alignment device 110 and the mounting table 106in cooperation, each probe of the probe card 108 is brought into contactwith the electrodes of the wafer W, so that electrical characteristicsof the multiple number of semiconductor devices formed on the wafer Ware inspected (see, for example, Patent Document 1).

In FIG. 10, the pogo frame 109 is supported by a conversion ring 112 andis fastened to an upper plate of the probe apparatus 100 via theconversion ring 112. The pogo frame 109 includes an opening 109A formedthrough a central portion of the pogo frame 109 in its thicknessdirection; and a ring portion 109B surrounding the opening 109A. Amultiple number of pogo pins 109C are arranged to penetrate the ringportion 109B in the thickness direction thereof. The pogo pins 109C arein contact with connecting terminals 108A formed on a periphery portionof the probe card 108 disposed under the pogo frame 109. The pogo pins109C serve to electrically connect probes 108B provided on a centralportion of a bottom surface of the probe card 108 with a non-illustratedinspection apparatus. The probes 108B are brought into contact withcorresponding electrodes of the semiconductor devices, which are placedunder the probes 108B, formed on the wafer W. A stiffener 113 made of,e.g., a flat plate-shaped metal member is provided within the opening109A of the pogo frame 109 in order to prevent deformation of the probecard 108.

Since semiconductor devices may be used in a high temperatureatmosphere, inspection of the electrical characteristics of thesemiconductor devices formed on the wafer may also be performed in ahigh temperature state. The wafer and the probe card may expand andcontract as temperature varies. Accordingly, in a high temperatureatmosphere of, e.g., about 90° C., positions of the electrodes of thesemiconductor devices formed on the wafer and positions of the probesprovided on the probe card may be deviated from each other due to adifference in their thermal expansion coefficients. As a result, theprobes of the probe card may not be accurately brought into contact withthe corresponding electrodes of the semiconductor devices, so that theinspection of the electrical characteristics of the semiconductordevices may not be performed appropriately.

To solve the problem, in the conventional probe apparatus, alow-expansion material having a thermal expansion coefficient close tothat of the wafer W may be used as the stiffener disposed within theopening 109A of the pogo frame 109. In this way, the thermal expansioncoefficients of the wafer W and the probe card 108 fastened to the pogoframe 109 may be apparently made equivalent to each other. As a result,a discrepancy in positions of the probes of the probe card 108 andpositions of the electrodes of the semiconductor devices on the wafer Wmay be reduced.

Patent Document 1: Japanese Patent Laid-open Publication No. 2004-140241

However, in a wafer inspection apparatus concerned in the presentdisclosure, a multiple number of inspection chambers are arranged in a3-dimensional grid shape, and it is attempted to reduce the weight andthe size of the inspection apparatus by sharing many devices by, forexample, aligning wafers in a common place other than the respectiveinspection chambers. Accordingly, in each inspection chamber, astiffener for obtaining required stiffness is not provided. Further, inthe wafer inspection apparatus concerned in the present disclosure, eachinspection chamber is configured as a whole contact type apparatusallowing all the probes formed on the probe card are brought intocontact with all the electrodes of the semiconductor devices formed onthe wafer at one time. For this configuration, the multiple number ofpogo pins are inserted over an entire surface of the pogo frame thatsupports the probe card, and, thus, the stiffness of the probe cardfastened to the pogo frame is obtained. Further, since there is no extraspace for accommodating therein a stiffener, the stiffener has not beenprovided.

That is, in the wafer inspection apparatus concerned in the presentdisclosure, it is not possible to make a thermal expansion coefficientof the probe card apparently equivalent to a thermal expansioncoefficient of the wafer by selecting a material for the stiffener as inthe conventional probe apparatus, and, thus, it is not possible toresolve a discrepancy in the positions of the electrodes of thesemiconductor devices formed on the wafer and the positions of theprobes formed on the probe card due to a difference in temperaturevariation. Accordingly, it is required to resolve such a discrepancy.

BRIEF SUMMARY OF THE INVENTION

In view of the foregoing problems, illustrative embodiments provide awafer inspection interface and a wafer inspection apparatus capable ofappropriately inspecting electrical characteristics of semiconductordevices formed on a wafer by resolving a discrepancy in positions of thewafer and a probe card due to a difference in thermal expansiontherebetween and by accurately aligning probes of the probe card withelectrodes of the semiconductor devices formed on the wafer.

In accordance with one aspect of an illustrative embodiment, there isprovided a wafer inspection interface. The wafer inspection interfaceincludes a probe card having a multiple number of probes at a surface ofthe probe card facing a wafer and the probes are arranged to correspondto electrodes of a multiple number of semiconductor devices formed onthe wafer; a frame that is in contact with a surface of the probe cardopposite to the surface of the probe card facing the wafer and supportsthe probe card; and a heating member provided in the frame.

The heating member may include a linear heater.

The frame may have a multiple number of rectangular through holes, andthe linear heater may be provided along respective sides of the throughholes.

The linear heater may be provided in a grid pattern.

The linear heater may be provided at a side of a contact surface betweenthe frame and the probe card on a cross section of the frame in athickness direction thereof.

The probes of the probe card may be arranged previously offset such thatwhen the probe card thermally expands by being heated to a predeterminedtemperature, each of the probes comes into contact with each of theelectrodes of the semiconductor devices on the wafer heated to thepredetermined temperature.

The predetermined temperature may be in the range from about, e.g., −30°C. to about +100° C.

Each of pogo pins may be inserted into each of the through holes.

In accordance with another aspect of the illustrative embodiment, thereis provided a wafer inspection apparatus having an inspection chamberfor inspecting electrical characteristics of semiconductor devicesformed on a wafer; and a transfer device for loading and unloading thewafer into and from the inspection chamber. The wafer inspectionapparatus includes a wafer inspection interface. Further, the a waferinspection interface includes a probe card having a multiple number ofprobes at a surface of the probe card facing a wafer and the probes arearranged to correspond to electrodes of a multiple number ofsemiconductor devices formed on the wafer; a frame that is in contactwith a surface of the probe card opposite to the surface of the probecard facing the wafer and supports the probe card; and a heating memberprovided in the frame.

In accordance with the illustrative embodiment, the heating member isprovided at the frame that supports the probe card by coming intocontact with the surface of the probe card opposite to the surface ofthe probe card facing the wafer. The probe card is heated in advance tohave a temperature where the electrical characteristics of semiconductordevices are inspected by the heating member. Further, the probes arearranged such that when the probe card is heated to have the temperaturewhere the electrical characteristics of semiconductor devices areinspected, each probe comes into contact with each of the electrodes ofthe semiconductor devices on the wafer heated to have the temperaturewhere the electrical characteristics of semiconductor devices areinspected. Accordingly, by using the probe card have the above-describedconfiguration, the positions of the electrodes of the semiconductordevices on the wafer and the positions of the probes of the probe cardcan be accurately aligned with each other. As a result, it is possibleto appropriately inspect the electrical characteristics of thesemiconductor devices formed on the wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

Non-limiting and non-exhaustive embodiments will be described inconjunction with the accompanying drawings. Understanding that thesedrawings depict only several embodiments in accordance with thedisclosure and are, therefore, not to be intended to limit its scope,the disclosure will be described with specificity and detail through useof the accompanying drawings, in which:

FIG. 1 is a perspective view illustrating an exterior view of a waferinspection apparatus in accordance with an illustrative embodiment;

FIG. 2 is a cross sectional view taken along a line II-II of FIG. 1;

FIG. 3 is a cross sectional view schematically illustrating aconfiguration of a wafer inspection interface included in an inspectionchamber of FIG. 2;

FIG. 4 illustrates a frame (pogo frame) in FIG. 3, and FIG. 4(A) is atop view showing a front surface thereof and FIG. 4(B) is a bottom viewshowing a rear surface thereof;

FIG. 5 is a partially enlarged cross sectional view of the waferinspection interface shown in FIG. 3;

FIG. 6 is a perspective view illustrating a pogo pin inserted into andfitted to the frame (pogo frame) of FIG. 4;

FIG. 7 is a process diagram for inspecting electrical characteristics ofeach semiconductor device on a wafer by using the wafer inspectioninterface of FIG. 5;

FIG. 8 is a process diagram for inspecting electrical characteristics ofeach semiconductor device on a wafer by using the wafer inspectioninterface of FIG. 5;

FIG. 9 is a cross sectional view illustrating a schematic configurationof a conventional probe apparatus; and

FIG. 10 is a cross sectional view illustrating a pogo frame in FIG. 9.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, illustrative embodiments will be described in detail withreference to the accompanying drawings.

FIG. 1 is a perspective view illustrating an exterior view of a waferinspection apparatus in accordance with an illustrative embodiment. Thewafer inspection apparatus 10 is configured as a whole contact typeinspection apparatus that inspects electrical characteristics bybringing all probes of a probe card into contact with all electrodes ofsemiconductor devices formed on a wafer at one time. This waferinspection apparatus 10 is developed based on the technical concept ofsharing many devices. Accordingly, in order to reduce a size of theapparatus, a wafer is aligned at a place other than an inspectionchamber.

In FIG. 1, the wafer inspection apparatus 10 includes aloading/unloading section S10, provided at a rear side of the waferinspection apparatus 10, for loading and unloading a wafer; aninspection section S40 provided at a front side of the wafer inspectionapparatus 10 while facing the loading/unloading section S10; and atransfer section S30 provided between the loading/unloading section S10and the inspection section S40.

The loading/unloading section S10 is partitioned into a multiple numberof unit loading/unloading areas corresponding to a multiple number ofmounting devices. The inspection section S40 is also partitioned into amultiple number of unit inspection areas corresponding to a multiplenumber of inspection chambers. That is, each of the loading/unloadingsection S10 and the inspection section S40 is partitioned into themultiple number of chambers in a 3-dimensional grid shape. A wafertransfer device to be described later (see FIG. 2) is moved in thetransfer section S30 between the loading/unloading section S10 and theinspection section S40.

FIG. 2 is a cross sectional view taken along a line II-II of FIG. 1.

Referring to FIG. 2, a multiple number of accommodation devices foraccommodating therein FOUPs F is provided in the loading/unloadingsection S10 as example mounting devices. An alignment section S20including an alignment chamber 12 is provided at a left end of theloading/unloading section S10. A needle mark inspection section S50including a needle mark inspection apparatus 17 is provided at a rightend of the loading/unloading section S10. Further, a wafer transferdevice 13 is provided in the transfer section S30, and a multiple numberof inspection chambers 14 are arranged in the inspection section S40.

The wafer transfer device 13 includes, for example, a rotational bodyprovided on a base; two vertically arranged arms, i.e., an upper arm anda lower arm, configured to be individually moved back and forth on therotational body in one direction; an elevation device configured to movethe base and the arms up and down; and a moving device configured tomove these devices back and forth along the transfer section S30. A pick13B for mounting and carrying a wafer W thereon is provided at a leadingend of the upper arm 13A. Further, a heating device 13C is embedded inthe pick 13B (as will be described with reference to FIG. 3). Wheninspecting electrical characteristics of semiconductor devices formed onthe wafer W, the heating device 13C heats the wafer W to a temperaturewhere the electrical characteristics of semiconductor devices areinspected (hereinafter, referred to as “electrical characteristicinspection temperature”). The heating device 13C may be formed by, forexample, a heat transfer heater.

In the wafer inspection apparatus 10, the wafer transfer device 13receives an uninspected wafer W and transfers the uninspected wafer Winto the alignment chamber 12 from a FOUP F. In the alignment chamber12, alignment of the wafer W with the pick 13B of the wafer transferdevice 13 is performed. Then, the wafer transfer device 13 transfers thealigned wafer W into an inspection chamber 14. While transferred intothe inspection chamber 14, the wafer W is heated to the electricalcharacteristic inspection temperature by the heating device 13C embeddedin the pick 13B. The inspection chamber 14 includes a wafer inspectioninterface 18 to be described later. The wafer inspection interface 18 isconfigured to inspect electrical characteristics of semiconductordevices formed on the wafer W.

Further, the wafer transfer device 13 transfers the inspected wafer Wfrom the inspection chamber 14 to the needle mark inspection device 17disposed in the needle mark inspection section S50 located at one end ofthe loading/unloading section S10. The needle mark inspection device 17is configured to inspect a needle mark (i.e., a mark of a contact with aprobe 25) on an electrode of the respective semiconductor devices on theinspected wafer W. Then, the wafer transfer device 13 loads theinspected wafer W into the FOUP F within the loading/unloading sectionS10. While transferred into the FOUP F, the inspected wafer W is cooledto a room temperature.

Here, the wafer transfer device 13 transfers a first wafer W unloadedfrom a first FOUP F into a first inspection chamber 14 via the alignmentchamber 12. While inspecting the electrical characteristics ofsemiconductor devices formed on the first wafer W in the firstinspection chamber 14, the wafer transfer device 13 may transfer asecond wafer W unloaded from a second FOUP F into a second inspectionchamber 14 via the alignment chamber 12. Alternatively, while inspectingthe electrical characteristics of the semiconductor devices formed onthe first wafer W in the first inspection chamber 14, the wafer transferdevice 13 may unload an inspected third wafer W from a third inspectionchamber and load the inspected third wafer W into a third FOUP F. Thatis, the wafer transfer device 13 transfers the wafers W in sequencebetween the multiple number of FOUPs F and the multiple number ofinspection chambers 14, and electrical characteristics of semiconductordevices formed on the wafers W are inspected in sequence in therespective inspection chambers 14.

FIG. 3 is a cross sectional view schematically illustrating aconfiguration of a wafer inspection interface included in the inspectionchamber of FIG. 2.

Referring to FIG. 3, the wafer inspection interface 18 includes a headplate 19, a frame (hereinafter, referred to as a “pogo frame”) 40, aprobe card 20, a fixing ring 21, a rod-shaped lifter 22 and atable-shaped chuck top 23. The head plate 19 is provided at a ceilingportion of the inspection chamber 14 and is made of a plate-shapedmember. The pogo frame 40 forms a bottom surface of the head plate 19.The probe card 20 is disposed to be in contact with a bottom surface ofthe pogo frame 40. The fixing ring 21 holds the periphery of the probecard 20 and supports the probe card 20 to the pogo frame 40. The lifter22 stands uprightly from a bottom portion of the inspection chamber 14and is configured to be moved up and down. The chuck top 23 is providedon a top portion of the lifter 22. The chuck top 23 has a cross sectionin which a central portion of the chuck top 23 is protruded. Further thechuck top 23 includes an upwardly protruding portion 23A; and astep-shaped portion 23B surrounding the protruding portion 23A andformed to be lower than the protruding portion 23A. A top flat surfaceof the protruding portion 23A serves as a wafer mounting surface 23C onwhich the wafer W is mounted.

FIG. 4 illustrates the pogo frame 40 of FIG. 3. FIG. 4(A) is a top viewshowing a front surface of the pogo frame 40, and FIG. 4(B) is a bottomview showing a rear surface of the pogo frame 40.

In FIGS. 4(A) and 4(B), the pogo frame 40 includes a pogo frame mainbody 41; a contact area 42 formed at a central portion of the pogo framemain body 41 to be in contact with the probe card 20; and a multiplenumber of through hole 43 formed at the contact area 42. The pogo framemain body 41 is a rectangular plate-shaped body having a size of, e.g.,about 450 mm×about 500 mm, and is made of a low thermal expansionmaterial such as Invar. A thickness of the pogo frame main body 41 is,e.g., about 10 mm. The central contact area 42 is a circular area ofabout 300 mmφ, and the through holes 43 are regularly formed at thecentral contact area 42. Here, each of the through holes 43 has a squareshape of which one side length is, e.g., about 16.5 mm. However, a shapeof the through hole 43 may not be limited thereto, and, by way ofexample, each of the through holes 43 may have a rectangle shape.Further, pogo pins are inserted into the through holes 43.

As shown in FIG. 4(A), a linear heater 44 as a heating device isprovided along the respective sides of the square-shaped through holes43 in a grid pattern. By way of example, a sheath heater may beappropriately used as the linear heater 44. The sheath heater is astraight tube-shaped heater obtained by inserting a heating coil in thecenter of a stainless steel pipe having a cross section of, e.g., about2 mmφ and by filling and hardening a gap between the pipe and theheating coil with MgO powder. This sheath heater can be bent and has along life time.

A multiple number of through holes 46 for heat insulation are formedaround the contact area 42. The through holes 46 are formed through thepogo frame main body in a thickness direction thereof and serve toreduce a heat loss by heat conduction.

The linear heater (hereinafter, referred to as “sheath heater”) 44provided at the pogo frame 40 is configured to heat the probe card 20 incontact with the pogo frame 40. When viewed from a cross sectionthereof, it is desirable to locate the sheath heater 44 at a positionclose to a contact surface between the pogo frame 40 and the probe card20. With this configuration, a heat transfer efficiency of the sheathheater 44 can be improved. Further, by heating the probe card 20 to atemperature equal to, e.g., an electrical characteristic inspectiontemperature of the wafer W in a short period of time, positions ofelectrodes of semiconductor devices formed on the wafer W and positionsof the probes 25 on the probe card 20 can be aligned with each other.

FIG. 5 is a partially enlarged cross sectional view of the waferinspection interface of FIG. 3.

In FIG. 5, the wafer inspection interface 18 includes the probe card 20having the multiple number of probes 25 on its surface facing a wafer W;the table-shaped chuck top 23 disposed to face the probe card 20 withthe wafer W therebetween; and the pogo frame 40 in contact with asurface of the probe card 20 opposite to the surface facing the wafer Wand supporting the probe card 20.

The multiple number of through holes 43, through which pogo pins 45 areinserted, are formed in the pogo frame main body 41 of the pogo frame40. Each through hole 43 has, e.g., a square cross sectional shape, andthe sheath heater 44 is provided along the respective through holes 43in, e.g., a grid pattern (see FIG. 4). Each pogo pin 45 includes aprotruding portion 45A of a square pillar shape having a square crosssection; and a step-shaped portion 45B formed around the protrudingportion 45A, as shown in FIG. 6. The protruding portion 45A of the pogopin 45 is inserted into corresponding one of the through holes 43. Thepogo pins 45 electrically connects the probe card 20 with anon-illustrated inspection apparatus provided on the head plate 19.

Referring back to FIG. 5, the probe card 20 has the multiple number ofprobes (inspection needles) 25 on its surface facing the wafer W. Theprobes 25 are arranged to correspond to electrodes of semiconductordevices formed on the wafer W, respectively. The fixing ring 21 isdisposed to surround an arrangement area of the probes 25 on the probecard 20. The fixing ring 21 supports the probe card 20 to the pogo frame40.

Further, an inner space 28 is formed between the probe card 20 and thewafer W, and an outer space 27 surrounding the inner space 28 is formedbetween the chuck top 23 and the fixing ring 21. The inner space 28 andthe outer space 27 are sealed by seal members 26 and 24, respectively(see FIG. 3).

Now, a process of inspecting electrical characteristics of semiconductordevices on a wafer by using the wafer inspection apparatus having thewafer inspection interface configured as described above will beexplained.

FIGS. 7 and 8 are process diagrams for inspecting electricalcharacteristics of semiconductor devices on a wafer using the waferinspection apparatus of FIG. 5.

First, before loading a wafer W into the inspection chamber 14, theprobe card 20 in contact with the pogo frame is previously heated to theelectrical characteristic inspection temperature of the wafer W, e.g.,about 90° C. by the sheath heater 44 provided at the pogo frame 40.Since the sheath heater 44 is provided in the grid pattern along therespective sides of the through holes 43 of the pogo frame 40 andlocated near the contact surface between the pogo frame 40 and the probecard 20, it is possible to efficiently heat the probe card 20.

Subsequently, the wafer W is loaded into the inspection chamber 14 bythe wafer transfer device 13. That is, the wafer W aligned with the pick13B of the wafer transfer device 13 and heated to the electricalcharacteristic inspection temperature of, e.g., about 90° C. by theheating device 13C embedded in the pick 13B is transferred by the wafertransfer device 13 into the inspection chamber 14, and then, ispositioned to face the probe card 20. At this time, the wafer transferdevice 13 aligns the pick 13B with the probe card 20 by moving the arm13A of the wafer transfer device 13 slightly (see FIG. 7(A)).Accordingly, the wafer W and the probe card 20 are aligned with eachother.

Thereafter, the wafer transfer device 13 brings the wafer W into contactwith the probe card 20 by moving the pick 13B toward the probe card 20.At this time, since the wafer W and the probe card 20 have been alreadyaligned with each other and both the wafer W and the probe card 20 arecontrolled to have the electrical characteristic inspection temperatureof the wafer W, e.g., to about 90° C. each probe 25 of the probe card 20is accurately brought into contact with each of the electrodes of thesemiconductor devices formed on the wafer W (see FIG. 7(B)). The probes25 provided on a surface of the probe card 20 facing the wafer W arearranged previously offset at a room temperature such that when theprobe card 20 thermally expands at about 90° C., each probe 25 comesinto contact with each of the electrodes of the semiconductor devices onthe wafer W heated to 90° C. and thermally expanded.

Then, by depressurizing the inner space 28 between the probe card 20 andthe wafer W, the wafer W is attracted toward and temporarily held by theprobe card 20. Thereafter, the pick 13B is separated from the wafer Wand is retreated out of the inspection chamber 14 by the wafer transferdevice 13 (see FIG. 7(C)).

Subsequently, the lifter 22 for supporting the chuck top 23 moves thechuck top 23 upward and brings the chuck top 23 into contact with thefixing ring 21. At this time, since the protruding portion 23A of thechuck top 23 protrudes upward from the step-shaped portion 23B, thewafer mounting surface 23C, i.e., the top flat surface of the protrudingportion 23A, comes into contact with the wafer W temporarily held by theprobe card 20. As a result, the wafer W is mounted on the wafer mountingsurface 23C (FIG. 8(A)).

Then, the chuck top 23 is brought into contact with the fixing ring 21,and the outer space 27 formed between the chuck top 23 and the fixingring 21 is depressurized. Accordingly, the chuck top 23 is attractedtoward the fixing ring 21 and indirectly held by the fixing ring 21. Atthis time, the chuck top 23 attracted to the fixing ring 21 presses thewafer W located on the wafer mounting surface 23C toward the probe card20. Since, however, the chuck top 23 has higher stiffness than that ofthe wafer W, the wafer W can be uniformly pressed toward the probe card20. Thereafter, the lifter 22 is moved downward and separated from thechuck top 23 (FIG. 8(B)).

Subsequently, an electric current of a preset value flows to theelectrodes of the semiconductor devices from the probes 25 of the probecard 20, and electrical characteristics of the semiconductor devices areinspected at one time. Then, the inspection process is finished.

In accordance with the present illustrative embodiment, the sheathheater 44 is provided at the pogo frame 40 that supports the probe card20 by coming into contact with the surface of the probe card 20 oppositeto the surface of the probe card 20 facing the wafer W, and the probecard 20 can be heated in advance to have the electrical characteristicinspection temperature of the semiconductor devices by the sheath heater44. Further, the probes 25 are arranged such that when the probe card 20is heated to have the electrical characteristic inspection temperature,each probe 25 comes into contact with each of the electrodes of thesemiconductor devices on the wafer heated to have the electricalcharacteristic inspection temperature. Accordingly, by using the probecard 20 have the above-described configuration, the positions of theelectrodes of the semiconductor devices on the wafer W and the positionsof the probes of the probe card 20 can be accurately aligned with eachother. As a result, it is possible to appropriately inspect theelectrical characteristics of the semiconductor devices formed on thewafer. Furthermore, the probe card 20 is heated to the electricalcharacteristic inspection temperature of the wafer W in advance beforethe probe card 20 comes into contact with the wafer W. Accordingly, theprobes 25 of the probe card 20 can be prevented from being overheatedafter coming into contact with the semiconductor devices formed on thewafer W, and the positions of the electrodes of the semiconductordevices can be prevented from being deviated. Thus, it is possible tosuppress production of defective products.

Furthermore, in accordance with the present illustrative embodiment,since the sheath heater 44 is a linear heater, it is possible touniformly arrange the sheath heater 44 in the grid pattern along therespective sides of the through holes 43. Thus, the probe card 20 can beuniformly heated.

In accordance with the present illustrative embodiment, the electricalcharacteristic inspection temperature of the semiconductor devicesformed on the wafer W ranges from, e.g., about 50° C. to about 150° C.,desirably, e.g., about 60° C. to about 90° C. If the electricalcharacteristic inspection temperature is excessively high, the sealmembers or the like may not maintain their thermal resistance.Meanwhile, if the electrical characteristic inspection temperature isexcessively low, the sheath heater 44 may not effectively function asthe heating member.

In accordance with the present illustrative embodiment, the electricalcharacteristics of the semiconductor devices on the wafer W areinspected by contacting each of the probes 25 of the probe card 20 witheach of the electrodes of all semiconductor devices on the wafer W atone time. Accordingly, productivity of the semiconductor devices can beimproved.

Moreover, in the wafer inspection apparatus in accordance with thepresent illustrative embodiment, since the wafer W is aligned at a placeother than the inspection chamber 14, temperature management for thewafer W and the probe card 20 to be brought into contact with the waferW is important. As a resolution, by heating the probe card 20 to thecertain temperature by the sheath heater 44 provided at the pogo frame40, the temperature management can be performed effectively.

While various aspects and embodiments have been described herein, otheraspects and embodiments will be apparent to those skilled in the art.The various aspects and embodiments disclosed herein are for thepurposes of illustration and are not intended to be limiting. Therefore,the true scope of the disclosure is indicated by the appended claimsrather than by the foregoing description, and it shall be understoodthat all modifications and embodiments conceived from the meaning andscope of the claims and their equivalents are included in the scope ofthe disclosure.

What is claimed is:
 1. A wafer inspection interface comprising: a probecard having a multiple number of probes at a surface of the probe cardfacing a wafer, the probes being arranged to correspond to electrodes ofa plurality of semiconductor devices formed on the wafer; a frame thatis in contact with a surface of the probe card opposite to the surfaceof the probe card facing the wafer and supports the probe card; and aheating member provided in the frame.
 2. The wafer inspection interfaceof claim 1, wherein the heating member includes a linear heater.
 3. Thewafer inspection interface of claim 2, wherein the frame has a multiplenumber of rectangular through holes, and the linear heater is providedalong respective sides of the through holes.
 4. The wafer inspectioninterface of claim 3, wherein the linear heater is provided in a gridpattern.
 5. The wafer inspection interface of claim 2, wherein thelinear heater is provided at a side of a contact surface between theframe and the probe card on a cross section of the frame in a thicknessdirection thereof.
 6. The wafer inspection interface of claim 1, whereinthe probes of the probe card are arranged previously offset such thatwhen the probe card thermally expands by being heated to a predeterminedtemperature, each of the probes comes into contact with each of theelectrodes of the semiconductor devices on the wafer heated to thepredetermined temperature.
 7. The wafer inspection interface of claim 6,wherein the predetermined temperature is in the range from about −30° C.to about +100° C.
 8. The wafer inspection interface of claim 3, whereineach of pogo pins is inserted into each of the through holes.
 9. A waferinspection apparatus having an inspection chamber for inspectingelectrical characteristics of semiconductor devices formed on a wafer;and a transfer device for loading and unloading the wafer into and fromthe inspection chamber, the wafer inspection apparatus comprising: awafer inspection interface including: a probe card having a multiplenumber of probes at a surface of the probe card facing a wafer, theprobes being arranged to correspond to electrodes of a plurality ofsemiconductor devices formed on the wafer; a frame that is in contactwith a surface of the probe card opposite to the surface of the probecard facing the wafer and supports the probe card; and a heating memberprovided in the frame.